Semiconductor Diamond Technology
Abstract
The development of techniques to enhance diamond heteronucleation without abrasive ex situ surface treatment now permits researchers to study diamond heteronucleation (epitaxy) at growth temperatures far below the thermal desorptions of hydrogen (H) and oxygen (O). At these temperatures, surface chemistry on the nucleating surface will be controlled by chemical exchange and abstraction reactions. This final report highlights the important results achieved during 1991 in diamond production and in diamond surface chemistry. Of particular interest are O and H interactions on diamond (100) surfaces and the development of water-based processes exclusive of molecular hydrogen for high quality low temperature diamond growth. The role of oxygen or hydroxyl is becoming increasing illucidated as surface chemistry studies show the propersity for O to terminate and stabilize 1x1 surfaces and as water-based growth processes permit diamond stabilization and growth at lower and lower temperatures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1991
- Accession Number
- ADA243986
Entities
People
- John B. Posthill
- R. E. Thomas
- Robert J. Markunas
- Ronald A. Rudder
Organizations
- RTI International