Pseudomorphic Semiconducting Heterostructures from Combinations of AIN, GaN and Selected SiC Polytypes: Theoretical Advancement and its Coordination with Experimental Studies of Nucleation, Growth, Characterization and Device Development
Abstract
Cubic solid solutions of A1N and SiC have been epitaxially deposited for the first time in this film form on Beta-SiC films grown on Si(100) using gas-source molecular beam epitaxy (GSMBE). Specific studies of the deposition of unintentionally-doped beta-SiC on Si(100) and A1-doped beta-SiC on alpha (6H)- SiC(0001) have also been achieved via GSMBE. Cross-sectional TEM confirmed the epitaxial growth of the three types of films. A low concentration of double positioning boundaries was observed in the material deposited on alpha(6H)-SiC. The initial stages of nucleation and thin film growth of A1N and GaN on sapphire and alpha(6H)-SiC single crystals were also investigated. No significant changes in the substrate surface chemistry was observed for growth on sapphire; however, Si4N4 was observed on the SiC surface as a result of ion bombardment prior to deposition. The growth of GaN on sapphire followed a Stranski-Krastanov growth mode, while on SiC, it appeared to be three-dimensional. By contrast, A1N grew on both substrates initially by a layer-by-layer mode. Ultraviolet radiation during deposition did not produce any significant changes in the nucleation and growth of these materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1991
- Accession Number
- ADA244001
Entities
People
- Robert F Davis
Organizations
- North Carolina State University