Reactive Ion Etching of Selected Polymers in O2 and CF4/O2
Abstract
A series of 17 polymers was etched in RIE mode in oxygen alone and in a mixture of carbon tetrafluoride with oxygen (8% O2). Rates were monitored using a laser interferometer. The etch rates in oxygen at 0.25 watt/cm2 fell in the range of 200-300 nm/min for the aromatics (polystyrene and derivatives), 350-450 nm/min for the aliphatics (methacrylates and vinyl acetate), and 500-850 nm/min for the cellulosics (methyl ether and nitrate). At a power density of 0. 50 watt/cm2 the etch rates were about 75 to 80% higher than those at the lower power density. The etch rate in the fluoride mixture was about half that in the oxygen, all other parameters being the same. Plasticizers which lower the Tg of polymers based on vinyl chloride, methyl methacrylate, or styrene do not change the etch rate of the polymers very much. There is slight increase in the rate for polystyrene and a slight decrease in the rate for poly(methyl methacrylate). All the compositional effects on etching rate seem to be related to the mole fractions of carbon and oxygen in the resist.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 18, 1991
- Accession Number
- ADA244059
Entities
People
- B. C. Dems
- B. Hand
- Francisco J. Medellı́n-Rodrı́guez
- T. Long
Organizations
- Cornell University School of Chemical and Biomolecular Engineering