Fusible Link Technology for Power Semiconductor Devices

Abstract

Theoretical and experimental studies were performed to investigate the feasibility for the formation of fusible links by using thin Aluminum films. The results of this research indicate that, by using the Aluminum films of 100 to 200 angstroms in thickness, it is possible to obtain links with fusing currents on the order of 10 milliamperes. These values may be acceptable for the fabrication of large area MOS-gated power devices.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1991
Accession Number
ADA244110

Entities

People

  • Bayant Jayant Baliga
  • Prasad Venkatraman

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Electrical Resistance
  • Fabrication
  • Films
  • Integrated Circuits
  • Materials
  • Melting Point
  • Metals
  • North Carolina
  • Numbers
  • Resistance
  • Semiconductor Devices
  • Semiconductors
  • Thermal Analysis
  • Thermal Resistance
  • Thickness
  • Thin Films

Fields of Study

  • Materials science
  • Physics

Readers

  • Electronics Engineering
  • Optical Fiber Sensing and Electromagnetic Propagation.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene