New Approach to Chemically Induced Silicon Oxidation

Abstract

The project New Approach to Chemically Induced Silicon Oxidation suggested a new and different approach to oxidation by the addition of small concentrations of a fluorine compound to the oxidation strain. This novel approach was successfully carried out within the framework of state-of-the-art oxidation technology. The objectives for the study were divided into four sections and the core elements of these sections are: study of oxidation kinetics with original source dichlorofluorethane, (Study of temperature, time, volume additions); involves MOS characterization and effect of hot carriers; influence of this process on stacking faults, furnace ambients and other oxidation related effects; and investigate use of other compounds for this purpose.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1991
Accession Number
ADA244133

Entities

People

  • Donald R Young .
  • Ralph J. Jaccodine

Organizations

  • Lehigh University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Chemistry
  • Electrical Engineering
  • Elements
  • Energy Bands
  • Fluorine
  • Heat Treatment
  • High Temperature
  • Impurities
  • Ion Implantation
  • Materials
  • Materials Science
  • Measurement
  • Oxidation
  • Partial Pressure
  • Point Defects
  • Scientists

Readers

  • Organic Chemistry
  • Semiconductor Device Technology
  • Systems Analysis and Design