Quantum 1/f Noise in Solid-State Devices in Particular Hg(1-x)Cd(x)Te N(+)-p Diodes
Abstract
Under the grant measurements of the spectral intensity of the current fluctuations produce by n(+)-p mercury cadmium telluride diodes, p-i-n HgCdTe diodes, AlGaAs/GaAs laser diodes, InGaAs/Indium phosphide p-i-n diodes, silicon bipolar transistors, Aluminum gallium arsenide/GaAs heterojunction bipolar transistors, silicon junction field effect transistors, and AlGaAs/GaAs resonant tunneling diodes were taken in the frequency range from 1 Hz to 100 kHz under different bias conditions and in the temperature range from 78-400 k. In addition, progress was made on the theoretical aspects of quantum 1/f noise.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1991
- Accession Number
- ADA244349
Entities
People
- A. D. Van Rheenen
- P. H. Handel
Organizations
- University of Minnesota