High-Frequency Signal-Processing Integrated Circuits

Abstract

A new topology for maximum-bandwidth matched-impedance monolithic amplifiers has been synthesized, fabricated, and tested. Stage gain of 9.3 dB and bandwidth of 3.2 GHz were realized in a 9 GHz Si bipolar monolithic technology. A new variable-gain amplifier with maximum dynamic range has been devised, fabricated, and tested. This achieved 850 MHz bandwidth, 30 dB gain control range and 25 dB maximum gain. Equivalent input noise resistance was 400 Ohm. The successful fabrication of on-chip inductors in Si monolithic circuits was demonstrated, with application to passive filters and bandpass amplifiers in the GHz frequency range. New high-performance monolithic voltage-controlled- oscillators and phase-locked loops were synthesized, built, and tested to verify new design procedures.

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Document Details

Document Type
Technical Report
Publication Date
Aug 26, 1991
Accession Number
ADA244410

Entities

People

  • D. O. Pederson
  • R. G. Meyer

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Advanced Electronics
  • Human Systems
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Amplifiers
  • Bandpass Amplifiers
  • Bandwidth
  • Communication Systems
  • Detectors
  • Dynamic Range
  • Electronics
  • Impedance
  • Integrated Circuits
  • Low Noise
  • Low Temperature
  • Microwaves
  • Oscillators
  • Power Amplifiers
  • Signal Processing
  • Students
  • Voltage Controlled Oscillators

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.