Study of Quantum Mechanical Effects in Deep Submicron Grating-Gate Field Effect Transistors

Abstract

This research program investigates the effect of extreme submicron and sub-100 nm spatial modulation of the electrostatic potential on the transport of electrons in heterojunction semiconductor devices. The test vehicle is the so-called periodic-gate FET (PGFET), with gate consisting of either a grating or a grid, of 200 nm periodicity. When electrons are made to move in a direction perpendicular to the potential modulation, i.e., perpendicular to the grating of along a grid axis, they exhibit a surface superlattice (SSL) effect. When moving along the potential modulation of a grating, electrons are restricted to only one degree of freedom and thus constitute a quasi-one- dimensional (QID) quantum system. Grid-gate FET's have been found to exhibit substantially stronger SSL Behavior than their grating-gate counterparts. Electron transport in quantized and spatially periodic systems have studied theoretically and new insights and quantitative calculations have been obtained. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1991
Accession Number
ADA244642

Entities

People

  • Dimitri A Antoniadis

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Electron Beam Lithography
  • Electron Density
  • Electron Gas
  • Electronics Laboratories
  • Electrons
  • Fabrication
  • Field Effect Transistors
  • Heterojunctions
  • Lithography
  • Power Electronics
  • Quantum Tunneling
  • Quantum Wires
  • Semiconductor Devices
  • Semiconductors
  • Transistors
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing