RF Vacuum Microelectronics
Abstract
We summarize our first quarter progress and discuss second quarter plans for the development of an edge emitter based vacuum triode with performance goals of 10 u microamp/micron emission current density at less than 250V and which can be modulated at 1 GHz for 1 hour. Device analysis of previously fabricated devices indicate systematic burnout of the edge. This observation indicates that electron heating of the anode and/or current concentration at localized microtips may be causing the burnout. This hypothesis has directed the design of new emitter structures to improve current emission and density. Use of high resistivity thin films as current limiters in emitter diodes has been laid out and will be fabricated in the next reporting period. Tantalum nitride appears to have the proper thin film characteristics for use in these diodes. A variety of other devices for diode and thin film characterization have been laid out for subsequent fabrication in the next several reporting periods. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 15, 1992
- Accession Number
- ADA244925
Entities
People
- D. Arch
- J. Holmen
- P. Bauhahn
- T. Akinwande
- T. Ohnstein
Organizations
- Honeywell International, Inc.