A Reliability Simulator for Radiation-Hard Microelectronics Development
Abstract
A real-time reliability simulator to predict device lifetime of n- channel MOSFET transistors due to channel hot-electron (CHE) degradation was developed. The correlation between the x-ray radiation induced and hot-electron induced interface state generation was established for both conventional non-LDD and the LDD n-channel devices by using appropriate failure criteria. The correlation has been confirmed by the charge pumping measurements. Software modules were developed to control the hardware of the simulator, collect the data and perform the data analysis. The benefit of this stimulator is dramatically reduced test time. A new hot-carrier stress test procedure has been developed based on the constant gate current stress to evaluate the hot-carrier induced device lifetime of p-channel transistors. This approach ensures a constant electric field near the drain and the constant electron injection rate. It becomes possible to compare the hot-carrier sensitivity of p-channel devices from different process technologies.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1991
- Accession Number
- ADA245105
Entities
People
- David H. Huang
- Everett E. King
- J. J. Wang