Cadmium Telluride Thin Films on Silicon Substrates

Abstract

This report discusses the epitaxial growth of CdTe films on silicon substrates by the use of a closed hot wall epitaxy (CHWE) system. Deposition parameters were varied in order to determine the growth condition for obtaining good quality CdTe films. The characteristics of the films were investigated by scanning electron microscopy, x-ray diffraction and Auger electron spectroscopy. Experimental data show that no film grows when the source temperature is below 450 C. The film growth changes linearly with source temperature at a rate of 0. 0252 Angstrom/sec/dec C, and the best film was grown at a source temperature of 475 C. It was found that the lattice constant of the CdTe films was 6.487 + or - 0.004A.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1991
Accession Number
ADA245309

Entities

People

  • P. G. Kornreich
  • Pradipta Ghosh
  • T. C. Kuo
  • Y. T. Chi

Organizations

  • Syracuse University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Crystal Growth
  • Diffraction
  • Electron Microscopy
  • Electron Spectroscopy
  • Electrons
  • Engineering
  • Epitaxial Growth
  • Films
  • Materials
  • Scanning Electron Microscopy
  • Spectroscopy
  • Temperature Gradients
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene