Monolithic Integration of Semiconductor and Superconductor Components
Abstract
The goal of the program is to develop transistor technology compatible with high transition temperature superconductor technology so that transistor pixel switches can be integrated with yttrium Barium copper oxide superconducting microbolometers in the same silicon substrate. A 4x4 matrix- addressable superconducting microbolometer array will be delivered at the completion of the program. Superconducting films of YBa2Cu3O7 were grown in-situ on 3 - inch silicon wafers coated with amorphous silicon wafers coated with amorphous silicon nitride and polycrystalline yttria stabilized zirconia.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1991
- Accession Number
- ADA245351
Entities
People
- Burgess Johnson
Organizations
- Honeywell International, Inc.