Investigation of Kinetics of MOCVD Systems
Abstract
Several issues related to epitaxy of III-V semiconductors by hydride VPE and MOCVD were investigated. A complex chemical equilibrium analysis was performed in order to investigate the controllability of hydride VPE. The critical control parameters for the deposition of InGaAsP Lattice matched to InP are deposition temperature, system pressure, Group III Molar Ratio, Group V molar Ratio. An experimental characterization of the Ga and In source reactors was accomplished. A MOCVD System was constructed for the deposition of AlGaAs. An investigation was performed to determine the controlling parameters of laser-enhanced deposition of GaAs and AlGaAs using an argon ion laser. Enhancement of deposition was observed when the system was operated in the reaction limited regime. The use of a Ga/In alloy source was studied for the deposition of GaInAs by the Hydride method. The system was used to produce state-of-the-art P-I-N photo-detectors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1991
- Accession Number
- ADA246090
Entities
People
- Timothy J. Anderson
Organizations
- University of Florida