Adsorption and Decomposition of Trimethyl Indium on Si(111)-7x7 Studied with XPS, UPS and HREELS
Abstract
The techniques of x ray photoemission spectroscopy, UPS or ultraviolet photoemission spectroscopy, and HREELS or high resolution electron energy loss spectroscopy are utilized to investigate the thermal decomposition of trimethyl indium (TMIn) on Si(111)-7x7. When dosed at 120 K, TMIn was primarily molecularly adsorbed on hte surface with a minor splitting of CH3 groups from the central in atom. Upon annealing the sample at 280 K, partial desorption of TMIn was accompanied by further dissociation of the In-C bonds; Annealing the surface from 540 to 620 K caused complete cracking of the In-C bonds, simultaneously a new peak at 128 meV was observed in HREELS, which is assigned to the CH3 groups attached to the surface. At 620 K and above, the SiH species was evident in both UPS and HREELS, indicating the onset of CH bond cracking; meanwhile the atomic In started to desorb. These processes continued as the sample was further annealed up to 790 K. finally at T greater than 950 K, SiC was formed after the complete cracking of CH bonds and the desorption of In and H species.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1991
- Accession Number
- ADA246261
Entities
People
- Jason C. Chu
- Lin Ming-chang
- Yue Bu
Organizations
- Emory University