Process-Dependence of Properties in High Thermal Conductivity Aluminum Nitride Substrates for Electronic Packaging
Abstract
Recent advances in high performance electronic devices, such as high speed VLSI's, logic circuits, and high power transistors have produced devices with a higher circuit density that produce a large amount of heat. Aluminum oxide is currently the most commonly used substrate material in microelectronic packaging. However, its low thermal conductivity and high coefficient of expansion have led researchers to investigate other materials. The properties of A1N substrate material compare well with those of the other substrate materials. In addition to a thermal conductivity up to ten times that of Al2O3, A1N has a coefficient of thermal expansion that is closer to that of silicon. Beryllium oxide has an higher thermal conductivity than A1N, however its coefficient of thermal expansion is significantly higher than that of silicon, and its high toxicity creates handling problems during manufacture that lead to high production costs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1991
- Accession Number
- ADA246429
Entities
People
- John H. Cooper
Organizations
- Naval Postgraduate School