Characterization of Semi-Insulating Gallium Arsenide

Abstract

This project was established for the purpose of characterization of samples from melt grown single crystals of nominally undoped Gallium arsenide, primarily such crystals as grown by the vertical zone melt (VZM) method at the Naval Research Laboratory. During this period electrical and optical samples have been measured for 13 of these VZM-grown gallium arsenide. Measurements made at Western Washington University (WWU) under the terms of this project have been in accordance with the Statement of Work provided at the project's outset: including near-infrared transmittance measurements for determination of neutral and ionized EL2 center concentrations, local vibrational mode (LVM) measurements in the mid-IR relative to carbon impurities, and measurements of dc electrical transport properties versus temperature. A program for growth of GaAs and other semiconductors by the VZM method began at NRL several years ago, and the practicality of this method for growing semi-insulating (SI) nominally undoped GaAs in a pBN crucible was demonstrated by Swiggard (1989) and in various subsequent papers.

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Document Details

Document Type
Technical Report
Publication Date
Aug 30, 1991
Accession Number
ADA246511

Entities

People

  • John S. Blakemore

Organizations

  • Western Washington University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Climate Change
  • Coefficients
  • Crystals
  • Electrical Measurement
  • Electrical Properties
  • Electron Mobility
  • Electrons
  • Fermi Levels
  • Gallium Arsenides
  • Heat Of Activation
  • Materials
  • Measurement
  • Military Research
  • Mobility
  • Plastic Explosives

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics