Defects in Semiconductors 16: Proceedings of the International Conference (16th) Held in Bethlehem, Pennsylvania on 22-26 July 1991. Part 3
Abstract
Partial contents include: (1) Atomic defect configuration identified by nuclear techniques; (2) Combination of deep level transient spectroscopy; (3) Microscopy of Frenkel pairs in semiconductors by nuclear techniques; (4) Muon stopping sites in semiconductors from decay positron channeling; (5) Polarized spectroscopy of complex luminescence centers; (6) A re-evaluation of electric field enhanced emission measurements for use in type and charge state determination; (7) X ray spectroscopy following neutron irradiation of semi- conductor silicon; (8) Transition metals in silicon carbide (SiC) : vanadium and titanium; (9) Photoluminescence excitation spectroscopy of cubic SiC grown by chemical vapor deposition on Si substrates; (10) Luminescence and absorption of vanadium in 6H SiC; (11) Impurity defect reactions in ion implanted diamond; (12) Electron trapping defects in MBE-grown relaxed n-In0.05- Ga0.95 As on gallium arsenide; (13) Scanning tunneling microscopy studies of semiconductor surface defects; (14) Photoluminescence characterisation of the silicon surface exposed to plasma treatment; (15) An analysis of point defect fluxes during silicon dioxide precipitation in silicon; (16) Electrical properties of oxidation-induced stacking faults in n-type silicon; (17) Morphology change of oxygen precipitates in CZ-Si wafers during two-step heat-treatment; (18) Ion implantation induced sheet stress due to defects in thin (100) silicon films; and (19) Hydrogen induced defects and defect passivation in silicon solar cells.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1992
- Accession Number
- ADA246521
Entities
People
- Gary G. Deleo
- Gordon Davies
- Michael Stavola
Organizations
- Lehigh University