Scanning Tunneling Microscopy of Semiconductor Surfaces
Abstract
This report is a summary of our results during the second year of a research program aimed at studying the epitaxial growth of metals on the (111) and (100) surfaces of silicon using scanning tunneling microscopy (STM). The following three systems have been studied in depth during the past year: Al:Si(100), Sn:Si(100), and Yb:Si(111). The room temperature deposition of Al on Si(100) results in the formation of metal dimer rows, similar to the behavior of other group-III metals on Si(100). At elevated temperatures, Al forms 'bow tie' structures which have also been observed on the annealed In:Si(100) surface. In contrast to the group-III metal systems, the annealed Sn:Si(100) system illustrates a complicated phase mixing behavior which involves numerous surface structures. In spite of the complexity of these structures, we believe that many of them can be simply modeled as Sn-Sn dimers. Finally, we have studied the Yb:Si(111) system, which forms two types of reconstructions up to 0.5 ML: (1) a lower coverage 3x1 phase and (2) higher coverage 'nxl' phases (5x1, 7x1, 2x1).
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1991
- Accession Number
- ADA246853
Entities
People
- A. A. Baski
- Calvin Quate
Organizations
- Stanford University