Research in High Dielectric Properties of Ferroelectric Materials
Abstract
The magnetron sputtering technique has been used to grow morphotropic phase boundary ferroelectric thin films of tungsten bronze PBKNN and perovskite BaTiO3, KTN and PZT. Film crystallinity was found to be strongly Influenced by substrate temperature, with temperatures of 500-6000C usually required. Single crystal PSKNN films were grown on SBN:60 substrates, whereas grain-oriented films were achieved on (100)-oriented silicon substrates. PLZT films are grain- oriented for (001)-oriented SBN and have excellent surface quality for guided wave applications. This Is the first time such films have been grown on tungsten bronze substrates. Both PSKNN and PZT films present a great promise for SLM and electronic memory applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1992
- Accession Number
- ADA246899
Entities
People
- R. R. Neurgaonkar