Passivation and Gating of GaAs and Si Surfaces Using Pseudomorphic Structures

Abstract

This program explores MISFET structures in material systems with no suitable native oxide. This has included GaAs, and in this latest period Ge. A novel structure has been developed utilizing a thin (<15 A) epitaxial layer of Si to control the chemical interface formed by deposition of SiO2. Detailed characterization of the interfacial chemistry is presented along with p-channel MISFET results. A room temperature, p-channel transconductance of 52 mS/mm was measured at a gate length of 2 microns; along with a peak effective hole mobility of 430 cm2V-lsec-1.

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Document Details

Document Type
Technical Report
Publication Date
Feb 19, 1992
Accession Number
ADA246990

Entities

People

  • G. G. Fountain
  • M. J. Mantini
  • Robert J. Markunas
  • Ronald A. Rudder
  • S. V. Hattangady

Organizations

  • RTI International

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chemistry
  • Electrical Properties
  • Engineering
  • Fabrication
  • Field Effect Transistors
  • Films
  • Heterojunctions
  • Low Temperature
  • Materials
  • Materials Processing
  • Materials Science
  • Measurement
  • Mobility
  • Semiconductors
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology