Development of a Ge/GaAs HMT Technology Based on Plasma Enhanced Chemical Vapor Deposition

Abstract

The following report details the progress on ONR contract number N- 00014-86-C-0838 during the period from January 1, 1991 to December 31, 1991. This program is targeted at development of a Ge on GaAs High Mobility Transistor (HMT) technology. During this period, the work has focused on 2 areas. The first area described involves the effect of the Si deposition parameters on the electrical characteristics of the composite Ge-pseudomorphic Si-SiO2 MIS structure. Complementary n and p type Ge MIS structures are presented which exhibit low midgap Dit values. The second area described involves the fabrication of Ge MISFET devices using the pseudomorphic Si-SiO2 gate insulator. These n-channel transistors exhibit a transconductance of 24 mS/mm at a gate length of 2 microns.

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Document Details

Document Type
Technical Report
Publication Date
Jan 21, 1992
Accession Number
ADA246991

Entities

People

  • G. G. Fountain
  • Robert J. Markunas

Organizations

  • RTI International

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Contracts
  • Dielectrics
  • Electrons
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • Films
  • Heterojunctions
  • Low Temperature
  • Materials
  • Materials Processing
  • Measurement
  • Mobility
  • Semiconductors
  • Silicon Compounds
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene