Numerical Simulation of the Function of Scientific Instrumentation for Measuring the Speed of Electron Devices

Abstract

Implementation of three algorithms, (1) moment equation, (2) Monte Carlo, and (3) quantum Liouville equation algorithms, were used in a program to determine the high speed and high frequency operation of submicron electron devices. For a psuedomorphic high electron mobility transistor, high frequency, small signal, subpicosecond charge density waves were observed to form within the two dimensional electron gas. Large signal operation of the PHEMT indicated that the switching time of the device was governed by the longest relaxation effect, the energy relaxation time, estimated to be longer than two picoseconds. A simple two terminal device configuration was examined. It was determined that measurements of its transient behavior, would expose differences in the key relaxation times governing III-V device behavior, and provide the first direct measurement of nonequilibrium effects in 'semiconductor' devices. Transient instrumentation, Simulation, Speed, Two-dimensional pseudomorphic HEMT, Picosecond.

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Document Details

Document Type
Technical Report
Publication Date
Feb 13, 1992
Accession Number
ADA247006

Entities

People

  • G. A. Andrews
  • H. L. Grubin
  • J. P. Kreskovsky
  • M. A. Osman
  • W. R. Briley

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Algorithms
  • Boltzmann Equation
  • Electron Density
  • Electron Gas
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Liouville Equation
  • Measurement
  • Monte Carlo Method
  • Picosecond Time
  • Relaxation Time
  • Semiconductor Devices
  • Semiconductors
  • Two Dimensional

Readers

  • Computational Modeling and Simulation
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing