Studies of 1,3-Disilacyclobutanes as Single-Source CVD Precursors to Silicon Carbide
Abstract
Substituted 1,3-disilacyclobutanes were studied as potential low temperature single-source CVD precursors to silicon carbide. These studies were carried out in a cold-wall LPCVD system maintained at a total reactor pressure of 1.0 Torr using a mass flow controlled argon carrier gas. The precursor was decomposed on resistively heated Si(100) substrates at temperatures ranging from 700 C - 1100 C. Gas chromatography-Fourier transform infrared spectroscopy and quadrupole mass spectrometry were used to identify the volatile pyrolysis byproducts from each precursor. The decomposition onset temperature was separately determined for each precursor by monitoring the major pyrolysis byproducts, by using quadrupole mass spectrometry, while slowly increasing the substrate temperature. Scanning and transmission electron microscopy were used to determine the crosssectional and surface morphology and also the deposition rate, which ranged from ca.0.035 micron/h to 12.0 micron/h. Silicon carbide, Disilacyclobutanes, MOCVD, single-source precursor.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1991
- Accession Number
- ADA247111
Entities
People
- David J. Larkin
- Leonard V. Interrante
Organizations
- Rensselaer Polytechnic Institute