Large-Area, Plasma-Assisted, Halogen-Based Diamond Deposition
Abstract
A number of chemical systems have been evaluated for diamond growth in the parallel plate capacitive systems. Unlike previous work in the rf inductive systems, diamond growth from H2/CH4, H2/CHI, and H2O/CH3 OH systems in the parallel plate was not forthcoming. Analysis of the critical differences between the rf inductive vs rf capacitive coupling identified the plasma density and the degree of plasma dissociation to be the substantial differences. We have embarked on a course to evaluate scale of the rf inductive technology- by development of a planar inductive coil which would merely replace the capacitive plate on standard large area rf system. Preliminary results show that creation of a high density plasma at low pressures and modest power levels over a 100 nm area is feasible with the current 500W power supply. No diamond growths have yet been attempted.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 04, 1992
- Accession Number
- ADA247423
Entities
People
- Ronald A. Rudder
Organizations
- RTI International