Leakage Current Measurements in SOI Devices

Abstract

Total dose response of both NMOS and PMOS FETs fabrication on SOI substrates were studied. Back channel leakage currents were studied. Two types of SOI substrates were chosen to study back channel leakage currents: SIMOX and ZMR. Subthreshold current-voltage characteristics as a function of total dose of the back channel and front channel of SIMOX and ZMR SOI substrates are reported. Some preliminary reports on the buried oxide leakage current are also provided. Bach channel leakage, SIMOX, ZMR, Total Dose Response.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1991
Accession Number
ADA247694

Entities

People

  • Charles Surya

Organizations

  • Syracuse University

Tags

Communities of Interest

  • Advanced Electronics
  • C4I
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Air Force Facilities
  • Battle Management
  • Command And Control
  • Computational Science
  • Fabrication
  • Frequency
  • Gamma Rays
  • Heat Of Activation
  • Information Processing
  • Ion Implantation
  • Measurement
  • Oxides
  • Radiation
  • Radiation Dosage
  • Substrates

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology