The Temperature Dependence of a Large Dynamic Range Photodetector Structure

Abstract

A recently developed photodetector circuit exploits the exponential voltage-to-current characteristic of a MOSFET operated in the subthreshold region to achieve a logarithmic steady state response. This paper analyzes the temperature dependence of the circuit operation and presents experimental results demonstrating the capabilities and limitations of the model.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1991
Accession Number
ADA247760

Entities

People

  • Robert J. Inkol

Organizations

  • Defence Research and Development Canada

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accuracy
  • Amplifiers
  • Cells
  • Circuits
  • Current Amplifiers
  • Dynamic Range
  • Electronic Amplifier
  • Materials
  • Measurement
  • N Type Semiconductors
  • Operational Amplifiers
  • Photodetectors
  • Security
  • Semiconductor Devices
  • Semiconductors
  • Solar Cells
  • Steady State

Fields of Study

  • Physics

Readers

  • Mathematical Modeling and Probability Theory.
  • Microwave Engineering.
  • Semiconductor Device Technology