Physics and Technology of III-V Pseudomorphic Structures

Abstract

We have developed an in situ technique for determining the group-V composition in gas-source molecular beam epitaxy (GSMBE) growth of mixed group-V compounds, such as GaAsP, InAsP, and InGaAsP. The in situ technique consists of monitoring the intensity oscillations of group-V-induced reflection high-energy electron diffraction (RHEED). We have grown high-quality InAsP/InP strained- layer superlattices with exciton emission at 1.06, 1.3, or 1.55 microns, suitable for long-wavelength modulator applications. We have also explored the capability of GSMBE by investigating low-temperature-growth InP and p-type carbon doping in In0.5Ga0.5As and In0.5Ga0.5P.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1991
Accession Number
ADA248330

Entities

People

  • C. W. Tu

Organizations

  • University of California, San Diego

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Molecular Beam Epitaxy
  • Optical Fibers
  • Optoelectronic Devices
  • Power Electronics
  • Quantum Wells
  • Schottky Diodes
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene