Zee Star Analysis

Abstract

Forces contributing to the effective valence Z* in electromigration have been theoretically studied for the following systems: An impurity in the vicinity of, a grain boundary, an impurity in the vicinity of a dislocation, and impurity in a disordered system. The presence of a grain boundary or dislocation was found to change Z* and the residual resistivity by an amount on the order of 10% to 50%. The local transport field in mesoscopic systems was investigated, and the calculations suggest that the scanning tunneling microscope can effectively probe this field. Non-adiabatic recoil effects in the wind force exerted on an impurity were also considered. Electromigration, Effective valence, Mesoscopic systems, Electron transport theory.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1991
Accession Number
ADA248342

Entities

People

  • Richard S. Sorbello

Organizations

  • University of Wisconsin–Milwaukee

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Boundaries
  • Diseases And Disorders
  • Dislocations
  • Elastic Scattering
  • Electron Density
  • Electron Flux
  • Electron Gas
  • Electrons
  • Engineering
  • Failure Mode And Effect Analysis
  • Grain Boundaries
  • Inelastic Scattering
  • Quantum Tunneling
  • Relaxation Time
  • Scattering
  • Test And Evaluation
  • Thin Films

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene