Study of Ultra Short HFET Devices with InP Substrates

Abstract

This research covered modulation-doped field effect transistors (MODFET's) of AlInAs/GaInAs/AlInAs/InP grown by molecular beam epitaxy (MBE). These are the highest frequency transistors yet made, but generally suffer from problems. The problem studied is that of obtaining well-behaved current vs voltage characteristics for these transistors, including reducing the anomalous kink effect, and increasing breakdown voltage. The most important results are the near-elimination of the kink effect by using reduced arsenic flux in the MBE growth, and sharply (-100:1) reduction of the gate breakdown current by using a barrier-enhancement acceptor doping plane under the gate. Near pinch-off, the drain-source voltage at breakdown was doubled. Additionally, the optimization of the fabrication technology of the mushroom (or T) shaped gates was completed for these devices, and integrated circuits for millimeter amplifiers and oscillators were designed and fabricated.

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Document Details

Document Type
Technical Report
Publication Date
Jan 30, 1992
Accession Number
ADA248448

Entities

People

  • Heonjoon Park
  • Lester F. Eastman
  • W. Haydl

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Circuits
  • Conduction Bands
  • Diodes
  • Electrical Engineering
  • Electron Beam Lithography
  • Electrons
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optoelectronic Devices
  • Scientists
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology