Theory of Semiconducting Superlattices and Microstructures
Abstract
This final report summarizes theoretical work on semi conducting superlattices and microstructures. A focus of the work is a fundamental understanding of deep-level structures of impurities in semiconductors. Probably the most striking results in this area concern IV-VI semiconductors such as PbTe and SnTe, where we have originated the concept of false valence: In on a Te site in SnTe is a (triple) acceptor and has normal valence of -3 with respect to Te. But on a Te site in PbTe, In is a (triple) donor with a false valence of +3 with respect to Te because an In deep p-like one-electron level capable of trapping six electrons crosses the gap as x decreases in Pbl-xSnxTe. This theory predicts that In is a donor in PbTe but an acceptor in SnTe; it argues that in IV-VI semiconductors impurities often occupy the intuitively wrong site or antisite; it shows that the relevant In occupies Te sites; it explains low doping efficiencies; and it shows promise for explaining solidus curves.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1992
- Accession Number
- ADA248570
Entities
People
- John D. Dow
Organizations
- University of Notre Dame