Efficient Cr,Nd:Gd(3)Sc(2)Ga(3)O(12) Laser at 1.06 microns Pumped by Visible GaInP/AlGaInP Laser Diodes
Abstract
The 1.06 um Nd transition in co-doped CrNd:Gd3Sc2Ga3Ol2 (Cr,Nd:GSGG) is obtained by diode pumping Cr3+ at 670 nm and is shown to produce efficient, low-threshold laser operation. Both cw and long-pulse diode pumping were demonstrated, with pump power levels as high as 300 mW cw and 1 W pulsed. The lowest threshold power measured was 938 uW, and the highest output power obtained was 43 mW cw and 173 mW pulsed. The best slope efficiency obtained was 42.1%, 78% of the theoretical maximum. Loss measurements indicate a value of 0. 4% cm-1.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 09, 1991
- Accession Number
- ADA248819
Entities
People
- Richard Scheps
Organizations
- Naval Command, Control and Ocean Surveillance Center