Growth, Characterization and Device Development in Monocrystalline Diamond Films
Abstract
The effects of hydrogen on cluster binding energy and growth mode of diamond, the determination of the Schottky barrier height for Ti on (111) diamond and models for MESFET devices in diamond have been the subjects addressed in this reporting period. Capillarity and atomistic formulations for determining diamond thin film growth modes have been compared. Arguments are presented based on simple atomistic cluster binding energy calculations that suggest hydrogen should play an important role in stabilizing the 2-dimensional cluster configuration and thus promote layered diamond growth, assuming that the interfacial strain and misfit energies are not too high. Assumptions which may cause this model to break down experimentally are also discussed. The Ti-natural IIB(111) diamond interface has been investigated using UV photo-emission produced by a 21.2 eV light source. The chemically cleaned diamond showed a sharp (0.5 eV FWHM) peak at the position of the conduction band indicating a negative electron affinity surface. By determining the relative positions of the diamond valence band edge and the titanium Fermi level, the Schottky barrier height of titanium on diamond (111) was measured and found to be 1.0 + or - 0.2 eV. A model for the observed titanium induced negative electron affinity is proposed, based on the Schottky barrier height of titanium on diamond, and the work function of titanium. A detailed, theoretical model for p-type diamond MESFETs is being developed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1992
- Accession Number
- ADA248993
Entities
People
- Robert F Davis
Organizations
- North Carolina State University