Nucleation and Growth of Diamond on Carbon-Implanted Single Crystal Copper

Abstract

The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature (-820 C). This procedure leads to the formation of a graphite film on the copper surface, resulting in the great enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as <111> parallel to <0001> and <110> parallel to <1120>. This leads to a good understanding of diamond growth on carbon-implanted copper surfaces.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1992
Accession Number
ADA249021

Entities

People

  • C. W. White
  • Fulin Xiong
  • R. P. Chang
  • T. P. Ong

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chemistry
  • Crystal Structure
  • Crystals
  • Diffraction
  • Electron Microscopy
  • Graphitic Materials
  • Implantation
  • Ion Implantation
  • Materials
  • Materials Science
  • Microscopy
  • Raman Spectra
  • Scattering
  • Single Crystals
  • Spectra
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nanocomposite Materials Science
  • Surface Engineering/Surface Coating Technology.