Scattering Mechanisms for Semiconductor Transport Calculations

Abstract

We have applied our Monte Carlo approach to impact ionization to various important semiconductor materials including GaAs, InP and InAs. We find that in all these materials the ionization mechanism is quantitatively different to what has been described in previous-simplified models, such as Shockley's lucky electron theory. With regard to quantum transport, we have continued our work on the electron-electron interaction in simple nanostructures. The main goal of this study is to investigate whether Coulomb blockade effects continue to exist at the molecular level when quantization effects become significant.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1991
Accession Number
ADA249260

Entities

People

  • Jeff Bude
  • Karl Hess

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Collision Broadening
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Electron Energy
  • Energy Bands
  • Energy Conservation
  • Materials
  • Military Research
  • Monte Carlo Method
  • Physical Theories
  • Physics
  • Quantum Field Theory
  • Quantum Mechanics
  • Quantum Properties
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Nanoscale Plasmonic Nanotechnology
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Quantum Computing