Scanning Tunneling Microscopy

Abstract

Scanning tunneling microscopy (STM) has been used to image and modify the surfaces of III-V, II-VI and group IV semiconductors. A tip-simulator based on a photocode was developed. The simulator allows the development of ultra- sensitive electronics for controlling STM tip movement. Various forms of 'nano- machining,' including chiselling, sanding, and sweeping of atoms on a surface, were developed. An STM design was modified to allow bending of long thin samples of Si(100) in UHV to permit the study of surface strain. A variety of studies were conducted on Au (in air) CdTe (in air), Hg(sub 1-x)Mn(sub x)Te (under glycerin), and Hg(sub 1-x)Cd(sub x)Te (in air and under glycerin).

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Document Details

Document Type
Technical Report
Publication Date
Mar 17, 1992
Accession Number
ADA249262

Entities

People

  • John D. Dow

Organizations

  • University of Notre Dame

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Chemical Reactions
  • Chemistry
  • Compound Semiconductors
  • Conduction Bands
  • Crystal Structure
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Microscopy
  • Military Research
  • Phase Transformations
  • Quantum Mechanics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide

Readers

  • Electrochemical Surface Science
  • Manufacturing Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene