Focused Ion Beam Implantation

Abstract

The goals of this research program were to develop devices fabricated by focused ion beam implantation, such as tunable Gunn diodes, GaAs MESFET'S, silicon MOSFET's or other novel devices, and to advance the focused ion beam technology. All the goals were reached and are reported in this report.

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Document Details

Document Type
Technical Report
Publication Date
Mar 17, 1992
Accession Number
ADA249662

Entities

People

  • John Melngailis

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Coupled Devices
  • Computer Science
  • Diodes
  • Electrical Engineering
  • Electron Beam Lithography
  • Electronics
  • Electronics Laboratories
  • Fabrication
  • Field Effect Transistors
  • Gunn Diodes
  • Ion Beams
  • Measurement
  • Power Electronics
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Two Dimensional

Readers

  • Semiconductor Device Technology