Numerical Studies of Low Temperature Gallium Arsenide Buffer Layers and Their Influence on Device Operation
Abstract
This report summarizes recent work on the development and application of an algorithm for studying charge transport in low temperature gallium arsenide (LT GaAs) buffer layers and their influence on device operation. During this reporting period the drift and diffusion equations were modified to include the transient dependence of electrons and holes for gallium arsenide. Calculations were performed for two-terminal, one and two-dimensional structures. Studies with the one-dimensional structures focussed on the trap kinetics. The two-dimensional studies represent a first attempt to examine the effects of clusters on transport through the LT GaAs. The one-dimensional studies are very briefly summarized, as the results were presented at the recent MRS symposium on LT materials, and will appear in the conference proceedings. A copy of the paper accompanies this report. The newer clustering results are also included. We note that these latter results are very preliminary and are included to indicate the future direction of our LT studies.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1992
- Accession Number
- ADA250309
Entities
People
- H. L. Grubin
- J. P. Kreskovsky