Development of Ultra-Low Noise, High Sensitivity Planar Metal Grating Coupled AlGaAs/GaAs Multiquantum Well IR Detectors for Focal Plane Array Staring IR Sensor Systems
Abstract
In this reporting period, we have continued to make a significant progress towards the program goals. We have designed, fabricated and characterized several metal grating coupled bound-to-miniband (BTM) and step- bound-to-miniband (SBTM) transition QWIPs on the GaAs ad InP substrates for 8-12 microns focal plane arrays staring infrared sensor applications. Specific tasks performed include: (1) the design and growth of several (BTM) GaAs- and (SBTM) in GaAs-based QWIP structures as well as a new type-II normal incident AlAs/AlGas QWIP structure by using molecular beam epitaxy (MBE) technique, (2) the design and fabrication of the 1-D (line-grating) and 2-D (cross-grating) metal grating couplers on the QWIP's with different granting periods (1.1, 3.2, 5, 7. 2, and 10 microns), (3) the theoretical and experimental studies of the light coupling quantum efficiency versus grating period for the QWIP's, and (4) the theoretical and experimental studies of the dark current versus temperature and bias voltage for the BTM and SBTM QWIP's.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1992
- Accession Number
- ADA250368
Entities
People
- Shengsan Li
Organizations
- University of Florida