III-V Heterojunction Structures and High Speed Devices

Abstract

Growth conditions have been established for GaAs, InGaAs, InP and InGaP using the newly installed Gas Source Molecular Beam Epitaxy apparatus. A study was conducted on the pseudomorphic epitaxy of Si on GaAs. MIS structures were pursued through various SiN (x) and SiGe (x) interlayers. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Mar 02, 1992
Accession Number
ADA250399

Entities

People

  • Hadis Morkoç

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Bipolar Junction Transistors
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystals
  • Electronics Laboratories
  • Epitaxial Growth
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • High Electron Mobility Transistors
  • Molecular Beam Epitaxy
  • Power Electronics
  • Quantum Wells
  • Scattering
  • Semiconductors
  • Solid State Electronics
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology