Femtosecond Studies of Carrier Dynamics in Compound Semiconductors
Abstract
During the past year we have initiated a new research program to experimentally and theoretically investigate ultrafast processes and carrier dynamics in compound semiconductors. The objective of our program is to apply state of the art femtosecond measurement techniques including high resolution pump-probe absorption spectroscopy and time division interferometry measurements of nonlinear index as well as advanced theoretical techniques including ensemble Monte Carlo calculations and analytic solutions of rate equation models to study transient processes in semiconductors. The combination of experimental and theoretical approaches can be used to provide fundamental information about the physics of excited carriers in semiconductors and how they impact on electronic and optoelectronic device performance. Experimental efforts at MIT have centered on the development of new techniques for measurement of ultrafast processes in semiconductors and their application to study transient processes in AlGaAs. Studies focus on both femtosecond measurements of nonlinear index as well as absorption.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 06, 1992
- Accession Number
- ADA250584
Entities
People
- James Fujimoto
Organizations
- Massachusetts Institute of Technology