OMVPE Growth of InAsSbBi and Related Alloys Using New Organometallic Group V Sources

Abstract

The major goal of the project is the organometallic vapor phase epitaxial (OMVPE) growth of a new III/V alloy, InAsSbBi, with a band gap of <0.1 eV at 77 K. This material is expected to be useful for infrared detectors with response in the wavelength range from 8 to 12 microns. The alloy is metastable, but for certain growth conditions it can be produced by OMVPE. This requires very low growth temperatures of 250-350 deg C. This, in turn requires that new organometallic In and Sb precursors be developed which pyrolyze at lower temperatures than the conventional sources trimethylindium (TMIn) and trimethylantimony (TMSb). A related goal is to produce materials suitable for device fabrication.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1992
Accession Number
ADA250631

Entities

People

  • G. B. Stringfellow

Organizations

  • University of Utah

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Crystal Growth
  • Crystals
  • Detectors
  • Electrical Engineering
  • Electronic Materials
  • Electrons
  • Energy Bands
  • Engineering
  • Epitaxial Growth
  • Infrared Detectors
  • Low Temperature
  • Materials
  • Materials Science
  • Semiconductor Physics
  • Students
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology