Thermodynamic and Kinetic Aspects of III/V Epitaxy
Abstract
Crystal growth processes in general and epitaxial processes in particular are often discussed in terms three disciplines: thermodynamics, mass transport and hydrodynamics, and chemical reaction kinetics. This paper will concentrate on two of these, the thermodynamic and kinetic aspects of epitaxy. Three major influences of thermodynamics will be discussed: (1) Thermodynamics defines the driving force and hence the upper limit of growth rate. This occurs only when all reactants in the system are allowed to equilibrate with the substrate. (2) Thermodynamics often controls stoichiometry and the solid composition of alloys. An understanding of thermodynamic and kinetic constraints can lead to the growth of metastable alloys. (3) The driving force for ordering into natural superlattice structures during growth is also governed by thermodynamics. The actual ordered structures observed are dependent on the surface kinetics. This aspect of kinetics will be addressed in addition to the kinetics of both homogeneous and heterogeneous chemical reactions occurring during growth. Each of these topics is addressed in terms of fundamental concepts, with examples from recent research on the epitaxial growth of III/V semiconductor compounds and alloys.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADA250632
Entities
People
- G. B. Stringfellow
Organizations
- University of Utah