Triisopropylindium: Decomposition Study and Use for Low Temperature Growth
Abstract
The organometallic vapor phase epitaxial (OMVPE) growth of In- containing III-V semiconductors typically uses trimethylindium (TMIn). However, TMIn suffers from several problems. First, it is well known that the effective vapor pressure of solid TMIn changes with time because of changes in the surface area. Secondly, TMIn decomposes slowly for temperatures lower than 400 deg C in an atmospheric pressure OMVPE reactor; it is too stable for some low temperature applications. In addition, it causes carbon contamination, especially at low temperatures, due to the CH3 radicals. Thus, there is a need for new In precursors that are liquids at room temperature and do not contain CH3 radicals. This work reports the first decomposition and OMVPE growth studies for a newly developed indium source, triisopropylindium (TIPIn). The decomposition study was carried out in an isothermal flow tube reactor with the reaction products analyzed using a mass spectrometer. The temperature for 50% decomposition is approximately 110 deg C for TIPIn in a He ambient. This is about 2OO deg C lower than that for TMIn under similar conditions.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADA250666
Entities
People
- Chia‐Hung Chen
- G. B. Stringfellow
Organizations
- University of Utah