High Translational Energy Induced Reaction in Semiconductors

Abstract

The main objectives of this project are to develop novel instrumentation and to understand bond breaking and formation on semiconductor surfaces. The approaches used in achieving these objectives are to determine the dependence of adsorption on the translational and vibrational energies of incident molecules and to investigate energy exchange at surfaces. The systems which have been investigated in detail are the dissociative adsorption of carbon dioxide and the nondissociative adsorption of ethane on silicon surface. For these experiments a unique differentially pumped, time-resolved spectrometer, a molecular beamline, and a ultrahigh vacuum chamber with surface instrumentation were designed and constructed.

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Document Details

Document Type
Technical Report
Publication Date
May 05, 1992
Accession Number
ADA250980

Entities

People

  • Wilson Ho

Organizations

  • Cornell Laboratory of Atomic and Solid State Physics

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Adsorption
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemical Vapor Deposition
  • Data Acquisition
  • Electron Energy
  • Electron Spectroscopy
  • Electrons
  • Energy Transfer
  • Instrumentation
  • Molecular Beams
  • Molecules
  • Semiconductors
  • Solid State Physics
  • Spectrometers
  • Vacuum
  • Vacuum Chambers

Fields of Study

  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Research Science/Academic Research
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics