The Thermal Dissociation of Decaborane on Si(111)-(7x7) and Doping Effects in the Near Surface Region
Abstract
The thermal decomposition of decaborane (B10H14) and its doping effects on Si(111)-(7x7) has been investigated by surface spectroscopies. Upon adsorption between 100-300 K, molecular decaborane was identified on the surface by HREELS by the absence of Si-H surface species production. The thermal decomposition of adsorbed decaborane molecules involves a preferential removal of hydrogen from the weaker B-H-B linkage. H2 thermal desorption was observed to cover a wide temperature range between 300-900 K. Clean boron deposition on the surface was achieved at approximately 900 K. Upon heating to approximately 1275 K, extensive boron diffusion into bulk silicon produced a highly B-doped region below the surface (approximately 103 A) with a carrier hole concentration on the order of -10(19) cm(-3) depending upon the initial surface boron coverage and annealing conditions. The surface adopted a (3x3)R30 deg reconstruction with a nominal 1/3 ML boron occupying subsurface substitutional sites. Both the localized B-Si vibration and carrier surface plasmon excitation were observed by HREELS at 100 K.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1992
- Accession Number
- ADA251057
Entities
People
- J. T. Yates Jr.
- M. L. Colaianni
- P. J. Chen
Organizations
- University of Pittsburgh