Novel Precursors for Organometallic Vapor Phase Epitaxy
Abstract
During the development of organometallic vapor phase epitaxy (OMVPE) for the growth of III/V semiconductor materials, the choice of group III and group V source molecules has been limited: (1) only trimethyl- and triethyl- group IV and antimony compounds, developed for other applications, were available; (2) the hydrides were the only As and P sources capable of producing device quality material. The hazard posed by the hydride sources, due to their extreme toxicity as well as their storage in high pressure cylinders, was a major motivation for the development of new precursor molecules. This led to the realization that many features of the OMVPE process could be improved by the development of designer source molecules. This paper will emphasize the tertiarybutyl- As, P, and Sb precursors C4H9AsH2, C4H9PH2, and C4H9Sb(CH3)2. However, recent results using alternate In precursors, such as triisopropylindium (C3H7)31n, will be included. The fundamental aspects of the design of source molecules, including pyrolysis routes, will be mentioned; however, the focus is on the practical results obtained using these precursors for the OMVPE growth of III/V semiconductors.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADA251340
Entities
People
- G. B. Stringfellow
Organizations
- University of Utah