Tertiarybutyldimethylantimony: A New Sb Source For Low Temperature OMVPE Growth of InSb
Abstract
III-V semiconductors such as InAsSb, InSbBl, and InAsSbBl are useful materials for far-infrared applications. Their growth usually requires low temperatures. The standard Sb source, trimethylantimony (TMSb), decomposes very slowly at low temperatures. In this work, a new Sb source, tertiarybutyldimethylantimony(TBDMSb), is investigated for OMVPE growth of InSb. Good surface morphology InSb layers were obtained for growth temperatures from 450 to as low as 325 deg C. The growth temperature can be lowered by more than 100 deg C when TBDMSb replaces TMSb. The growth efficiency of InSb using trimethylindium (TMln) and TBDMSb is on the order of 1x10(4) micrometer/mole. The high values of growth efficiency indicate that there is neglectible parasitic reaction between TMln and TBDMSb. The results indicate that TBDMSb is an excellent replacement for TMSb and TIPSb in the growth of Sb-containing alloys.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADA251341
Entities
People
- Chia‐Hung Chen
- G. B. Stringfellow
Organizations
- University of Utah