Tertiarybutyldimethylantimony for InSb Growth
Abstract
Trimethylantimony (TMSb) is the standard Sb source for OMVPE growth of Sb-containing materials. However, TMSb pyrolyzes slowly for temperatures below 500 deg C, limiting its usefulness for low temperature growth. Recently, triisopropylantimony (TIPSb) has successfully been used to grow InSb. This allows the growth of high quality layers at V/III ratios near unity for temperatures as low as 430 deg C. For lower temperatures, higher V/III ratios are required due to incomplete TIPSb pyrolysis. This causes problems for the small bandgap materials which require growth temperatures lower than 400 deg C. In this work, tertiarybutyldimethylantimony (TBDMSb) was used, together with trimethylindium (TMin), for the growth of InSb. The optimum V/III ratio is near unity for growth temperatures from 375 to 450 deg C. Good surface morphology InSb layers can also be obtained at temperatures as low as 350 and 325 deg C at moderate V/III ratios of 10 and 17, respectively.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADA251342
Entities
People
- Chia‐Hung Chen
- D. L. Drobeck
- G. B. Stringfellow
- K. T. Huang
Organizations
- University of Utah