1/F Noise in Indium Phosphide Transistors
Abstract
The sensitivity of an optoelectronic receiver is determined by its electrical noise. We found that integrated optical receivers made in the past decade are much noisier than hybrid receivers. When the accepted receiver model of Smith and Personick was examined for the cause of this discrepancy, we quickly discovered that the model was missing an important noise source. Is this source, 1/f noise, neglected by Smith and Personick? 1/f noise does exist in indium-phosphide junction field-effect transistors as they are made in our laboratories. The noise corners are within a factor of two of 50 MHz. Since our transistors are probably representative of the indium-phosphide technology as a whole, this means that indium-phosphide-based receivers operating below about 100 MHz will display extra 1/f noise. Circuits operating above about 1 GHz will still have the 1/f noise, but its contribution will be negligible.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1992
- Accession Number
- ADA251479
Entities
People
- C. R. Zeisse
- D. P. Mullin
- R. Nguyen
Organizations
- Naval Command, Control and Ocean Surveillance Center