Adsorption, Diffusion and Epitaxy of Si on Si(100)
Abstract
We review our recent work on the migration and the self-organization of the Si atoms deposited on a Si(100)-(2Xl) surface. The silicon silicon interactions are modelled by the Stillinger-Weber potential, and we use molecular dynamics and Monte Carlo simulations, total energy calculations, as well as phenomenological approaches to study the following topics of current interest: the effects of surface reconstruction-unreconstruction on the adsorption dynamics; the spatial distribution of the adsorbate in the early stages of deposition; the migration of an adatom on a terrace or across a step; the role of adatom-adatom interactions in the formation of anisotropic islands; the transformation of a surface with single layer steps to one with double layer steps; the effects of kink-kink interaction in step roughening, etc. Wherever possible, the results obtained are compared with findings of recent experiments; we find that our qualitative conclusions are in agreement with the STM observations.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 15, 1992
- Accession Number
- ADA252058
Entities
People
- H. Metiu
- Zhicai Zhang
Organizations
- University of California, Santa Barbara